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Search for "lock-in technique" in Full Text gives 14 result(s) in Beilstein Journal of Nanotechnology.

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

  • Mengqi Fu,
  • Roman Hartmann,
  • Julian Braun,
  • Sergej Andreev,
  • Torsten Pietsch and
  • Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

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  • with evenly spaced magnetic layers. The magnetic and magneto-electrical properties of the multilayered nanowire array were characterized in a conventional bath cryostat at a temperature of 4.2 K. The differential resistance (dV/dI) was measured using the lock-in technique with a modulation voltage (5
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Published 03 Apr 2024

Direct measurement of surface photovoltage by AC bias Kelvin probe force microscopy

  • Masato Miyazaki,
  • Yasuhiro Sugawara and
  • Yan Jun Li

Beilstein J. Nanotechnol. 2022, 13, 712–720, doi:10.3762/bjnano.13.63

Graphical Abstract
  • darkness and illumination degrades the spatial and energy resolutions, reducing the accuracy of SPV measurements on the nanometer scale [23]. To overcome the above problem, direct SPV measurements by means of laser power modulation and a lock-in technique have been proposed. Streicher et al. used two
  • relatively slow SPV responses because it is based on the frequency modulation (FM) method in which bandwidth is limited to below a few kilohertz. Recently, a different type of methodology of directly measuring the SPV that is not based on a standard lock-in technique has been demonstrated and implemented to
  • perform time-resolved measurements of SPV [23][26][27]. In this paper, we propose a novel method of directly measuring the local SPV, namely AC bias Kelvin probe force microscopy (AC-KPFM), which is based on a lock-in technique (widely used in standard KPFM setups) and controls the AC bias to nullify a
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Published 25 Jul 2022

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

  • Olena M. Kapran,
  • Roman Morari,
  • Taras Golod,
  • Evgenii A. Borodianskyi,
  • Vladimir Boian,
  • Andrei Prepelita,
  • Nikolay Klenov,
  • Anatoli S. Sidorenko and
  • Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

Graphical Abstract
  • experimental setup and sample fabrication and characterization can be found in [23][34] and [43], respectively. Resistances are measured by the lock-in technique with different current amplitudes Iac. In all cases, the magnetic field is applied parallel to the film plane in the orientation sketched in Figure
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Published 17 Aug 2021

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

  • Abhishek Grewal,
  • Yuqi Wang,
  • Matthias Münks,
  • Klaus Kern and
  • Markus Ternes

Beilstein J. Nanotechnol. 2021, 12, 559–565, doi:10.3762/bjnano.12.46

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  • measurements are taken by modulating V (fm = 607 Hz, Vm = 10 mV peak-to-peak) and detecting the dI/dV signal with the lock-in technique while the tip height is adjusted so that the current I remains constant (constant-current mode) during the bias sweep. For KPFM measurements we stabilise the tip height at I
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Published 17 Jun 2021

Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)

  • Domenik M. Zimmermann,
  • Knud Seufert,
  • Luka Ðorđević,
  • Tobias Hoh,
  • Sushobhan Joshi,
  • Tomas Marangoni,
  • Davide Bonifazi and
  • Willi Auwärter

Beilstein J. Nanotechnol. 2020, 11, 1470–1483, doi:10.3762/bjnano.11.130

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  • sample being held at ≈6 K using electrochemically etched W tips. In the figure captions, voltages refer to the bias voltage applied to the sample. Differential conductance (dI/dV) spectra were recorded using the lock-in technique (f = 969 Hz, Vrms= 18 mV). Reducing the tip-sample distance by increasing
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Published 29 Sep 2020

Molecular attachment to a microscope tip: inelastic tunneling, Kondo screening, and thermopower

  • Rouzhaji Tuerhong,
  • Mauro Boero and
  • Jean-Pierre Bucher

Beilstein J. Nanotechnol. 2019, 10, 1243–1250, doi:10.3762/bjnano.10.124

Graphical Abstract
  • virtual ground. The dI/dV(V) signal was measured by a lock-in technique, applying a modulation voltage of 1 mV (rms) at a frequency of 900 Hz. For the thermopower experiment, the sample temperature is controlled by means of an embedded Zener diode heater, whereas the tip is thermally connected to the LHe
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Published 19 Jun 2019

Inelastic electron tunneling spectroscopy of difurylethene-based photochromic single-molecule junctions

  • Youngsang Kim,
  • Safa G. Bahoosh,
  • Dmytro Sysoiev,
  • Thomas Huhn,
  • Fabian Pauly and
  • Elke Scheer

Beilstein J. Nanotechnol. 2017, 8, 2606–2614, doi:10.3762/bjnano.8.261

Graphical Abstract
  • the lock-in technique [15][19][20]. In this study, the second derivative (d2I/dV2) is measured simultaneously with the differential conductance (dI/dV) by means of two lock-in amplifiers. The second derivative is normalized with dI/dV to compensate for the conductance change. Thus the IET spectroscopy
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Published 06 Dec 2017

Transport characteristics of a silicene nanoribbon on Ag(110)

  • Ryoichi Hiraoka,
  • Chun-Liang Lin,
  • Kotaro Nakamura,
  • Ryo Nagao,
  • Maki Kawai,
  • Ryuichi Arafune and
  • Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

Graphical Abstract
  • the electrically heated Si wafer. The Ag(110) substrate was heated at 500 K during the Si deposition. The deposition rate was 0.03 ML/min, where 1 ML ≈ 1.5 × 1015 Si atoms/cm2. The differential conductance spectra (dI/dV) were measured by a lock-in technique with the modulation voltage of 0.4–8.0 mV
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Published 16 Aug 2017

Thermo-voltage measurements of atomic contacts at low temperature

  • Ayelet Ofarim,
  • Bastian Kopp,
  • Thomas Möller,
  • León Martin,
  • Johannes Boneberg,
  • Paul Leiderer and
  • Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 767–775, doi:10.3762/bjnano.7.68

Graphical Abstract
  • across an electromigrated Au–molecule–Au junction by AC Joule heating of a nanopatterned resistor and recording with lock-in technique the local temperature by a scanning probe [17]. However, the conductance of these contacts cannot be tuned in situ. A MCBJ setup, in contrast, is stable enough to study
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Published 30 May 2016

Active multi-point microrheology of cytoskeletal networks

  • Tobias Paust,
  • Tobias Neckernuss,
  • Lina Katinka Mertens,
  • Ines Martin,
  • Michael Beil,
  • Paul Walther,
  • Thomas Schimmel and
  • Othmar Marti

Beilstein J. Nanotechnol. 2016, 7, 484–491, doi:10.3762/bjnano.7.42

Graphical Abstract
  • . By measuring the response of multiple particles in a viscoelastic medium in response to the excitation of a reference particle, we are able to determine the force propagation in the polymer network. For this purpose a lock-in technique is established that allows for extraction of the periodical
  • ability of the network to transmit mechanical forces. We also take a closer look at the influence of noise on lock-in measurements and state some simple rules for improving the signal-to-noise ratio. Keywords: cytoskeleton; intermediate filaments; lock-in technique; microrheology; optical tweezers
  • recorded motions of a group of particles located and connected to each other in the viscoelastic medium, it is possible to determine the transfer tensor of motion, the relationship of response amplitudes, phase shifts and frequency changes to higher harmonics with the help of the lock-in technique. A
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Published 24 Mar 2016

Spectroscopic mapping and selective electronic tuning of molecular orbitals in phosphorescent organometallic complexes – a new strategy for OLED materials

  • Pascal R. Ewen,
  • Jan Sanning,
  • Tobias Koch,
  • Nikos L. Doltsinis,
  • Cristian A. Strassert and
  • Daniel Wegner

Beilstein J. Nanotechnol. 2014, 5, 2248–2258, doi:10.3762/bjnano.5.234

Graphical Abstract
  • transferred in situ into the cold STM (T = 5 K). All images where taken in constant-current mode. For the tunneling spectra the current I and the differential conductance dI/dV (via lock-in technique, modulation voltage 10–20 mV) were measured simultaneously as a function of sample bias V under open-feedback
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Published 26 Nov 2014

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

  • Denis E. Presnov,
  • Sergey V. Amitonov,
  • Pavel A. Krutitskii,
  • Valentina V. Kolybasova,
  • Igor A. Devyatov,
  • Vladimir A. Krupenin and
  • Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

Graphical Abstract
  • increasing and it plateaus out at f ≈ 2 kHz in [5] or f ≈ 80 Hz in [21]. Therefore the lock-in technique [5] and the correlation analysis (simultaneous measurement by several equal devices) that we used allow us to eliminate 1/f-noise. Thus, the maximum NW FET sensitivity is defined by the frequency
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Published 28 May 2013

Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

  • Luca Camilli,
  • Manuela Scarselli,
  • Silvano Del Gobbo,
  • Paola Castrucci,
  • Eric Gautron and
  • Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2012, 3, 360–367, doi:10.3762/bjnano.3.42

Graphical Abstract
  • silicon photodiode and data were collected by a lock-in technique. The external quantum efficiency (EQE) is defined as the fraction of the incident photons, Nph, converted into photocurrent, i.e., the number of the generated electron–hole pairs, Ne–h, multiplied by the electronic charge, e. The number of
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Published 02 May 2012

Deconvolution of the density of states of tip and sample through constant-current tunneling spectroscopy

  • Holger Pfeifer,
  • Berndt Koslowski and
  • Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 607–617, doi:10.3762/bjnano.2.64

Graphical Abstract
  • curves were recorded at different set currents by employing a lock-in technique with a modulation frequency of ~500 Hz, which is well above the bandwidth of the topographic feedback loop. As tunneling tip, we used an electrochemically etched tungsten wire, which was subsequently heated in UHV to ~2000 °C
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Published 19 Sep 2011
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